E
E--p
pH
HE
EM
MT
T
A
AE
E6
60
08
8
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 1.3
Product Features
Application
• 10 ~ 4000MHz
• GaAs E-pHEMT
• 0.7dB Noise Figure
• 32dBm Output IP3
• 14dB Gain at 1900MHz
• 14dBm P1 dB
• SOT-143 Package
• Single Supply Voltage
• Pb Free / RoHS Standard
• HF-Band, Cellular, CDMA, W-CDMA,
Wimax Front-end Amplifier
• Low-Noise High Linearity Amplifier
Description
AE608 is a Low-noise amplifier designed with GaAs E-pHEMT in a low cost SOT-143 package.
This E-pHEMT amplifier is designed as low-noise devices for infrastructure equipment in the 10~4000MHz Wireless
technologies such as HF-Band, Cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Bluetooth, Wimax.
Specifications
PARAMETER
Units
Min
Typ
Max
Frequency Range
MHz
10- 4000
Gain (S21)
dB
12
14
Input Return Loss (S11)
dB
-18
Output Return Loss (S22)
dB
-10
Output 3
rd Order Intercept Point (OIP3)
dBm
29
32
Output 1dB compression Point (P1dB)
dBm
12
14
Noise Figure
dB
0.7
0.9
DC Operating Current
mA
30
45
60
Operating Gate Voltage(Vds=3V, Ids=45mA)
V
0.4
Threshold voltage
V
0.1
0.25
0.4
Test Condition
①
1900MHz, Vdd= +3V, 50ohm System at 25℃
②
OIP3 is measured with two tones, at an output power of +0dBm/tone separated by 1MHz.
Package Type: SOT-143
Absolute Maximum Ratings
PARAMETER
Rating
Remark
Operating Case Temperature (℃)
-40 ~ 85
Storage Temperature (℃)
-50 ~ 125
Drain-Source Voltage
+7V
Drain Current
120mA
Gate-Source Voltage
-5V ~ 1V
Channel Temperature
150℃
RF Input Power
20dBm
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
