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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LTC3788-1 датащи(PDF) 3 Page - Linear Technology |
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LTC3788-1 датащи(HTML) 3 Page - Linear Technology |
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3 / 28 page  LTC3788-1 3 37881f ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = 12V, unless otherwise noted (Note 2). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VLOADREG Output Voltage Load Regulation (Note 4) Measured in Servo Loop; ΔITH Voltage = 1.2V to 0.7V l 0.01 0.1 % Measured in Servo Loop; ΔITH Voltage = 1.2V to 2V l –0.01 –0.1 % gm1,2 Error Amplifier Transconductance ITH = 1.2V 2 mmho IQ Input DC Supply Current (Note 5) Pulse-Skipping or Forced Continuous Mode (One Channel On) RUN1 = 5V and RUN2 = 0V or RUN1 = 0V and RUN2 = 5V; VFB1(2) = 1.25V (No Load) 0.9 mA Pulse-Skipping or Forced Continuous Mode (Both Channels On) RUN1,2 = 5V; VFB1,2 = 1.25V (No Load) 1.2 mA Sleep Mode (One Channel On) RUN1 = 5V and RUN2 = 0V or RUN1 = 0V and RUN2 = 5V; VFB1(2) = 1.25V (No Load) 125 190 μA Sleep Mode (Both Channels On) RUN1,2 = 5V; VFB1,2 = 1.25V (No Load) 200 300 μA Shutdown RUN1,2 = 0V 8 20 μA UVLO INTVCC Undervoltage Lockout Thresholds VINTVCC Ramping Up l 4.1 4.3 V VINTVCC Ramping Down l 3.6 3.8 V VRUN1,2 RUN Pin On Threshold VRUN Rising l 1.18 1.28 1.38 V VRUNHYS RUN Pin Hysteresis 100 mV IRUN1,2 RUN Pin Hysteresis Current VRUN > 1.28V 4.5 μA IRUN1,2 RUN Pin Current VRUN < 1.28V 0.5 μA ISS1,2 Soft-Start Charge Current VSS = GND 10 μA VSENSE(MAX) Maximum Current Sense Threshold VFB = 1.1V l 68 75 82 mV VSENSE(CM) SENSE Pins Common Mode Range (BOOST Converter Input Supply Voltage VIN) 2.5 38 V ISENSE1,2+ SENSE+ Pin Current VFB = 1.1V, ILIM = Float 200 300 μA ISENSE1,2– SENSE– Pin Current VFB = 1.1V, ILIM = Float ±1 μA tr(TG1,2) Top Gate Rise Time CLOAD = 3300pF (Note 6) 20 ns tf(TG1,2) Top Gate Fall Time CLOAD = 3300pF (Note 6) 20 ns tr(BG1,2) Bottom Gate Rise Time CLOAD = 3300pF (Note 6) 20 ns tf(BG1,2) Bottom Gate Fall Time CLOAD = 3300pF (Note 6) 20 ns RUP(TG1,2) Top Gate Pull-Up Resistance 1.5 Ω RDN(TG1,2) Top Gate Pull-Down Resistance 1.5 Ω RUP(TG1,2) Bottom Gate Pull-Up Resistance 1.5 Ω RDN(TG1,2) Bottom Gate Pull-Down Resistance 1.5 Ω tD(TG/BG) Top Gate Off to Bottom Gate On Switch-On Delay Time CLOAD = 3300pF (Each Driver) 70 ns tD(BG/TG) Bottom Gate Off to Top Gate On Switch-On Delay Time CLOAD = 3300pF (Each Driver) 70 ns DFMAX(BG1,2) Maximum BG Duty Factor 96 % tON(MIN) Minimum BG On-Time (Note 7) 110 ns |
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