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AP2129 датащи(PDF) 7 Page - BCD Semiconductor Manufacturing Limited

номер детали AP2129
подробное описание детали  300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
PDF  15 Pages
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производитель  BCDSEMI [BCD Semiconductor Manufacturing Limited]
домашняя страница  http://www.bcdsemi.com
Logo BCDSEMI - BCD Semiconductor Manufacturing Limited

AP2129 датащи(HTML) 7 Page - BCD Semiconductor Manufacturing Limited

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300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Data Sheet
7
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reference Voltage
VREF
VIN=1.8V
1mA
≤IOUT≤300mA
0.748
0.8
0.816
V
Input Voltage
VIN
1.8
6
V
Maximum Output Current
IOUT(MAX)
450
mA
Load Regulation
∆VOUT
/(
∆IOUT*VOUT)
VIN-VOUT=1V,
1mA
≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(
∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Quiescent Current
IQ
VIN=VOUT+1V, IOUT=0mA
60
90
µA
Standby Current
ISTD
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Power Supply
Rejection Ratio
PSRR
Ripple 1Vp-p
VIN=VOUT+1V
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
Output Voltage
Temperature Coefficient
(
∆VOUT/VOUT)
/
∆T
IOUT=30mA, -40oC≤TJ≤85oC
±100
ppm/oC
Output Current Limit
ILIMIT
400
mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
Soft Start Time
tUP
50
µs
RMS Output Noise
VNOISE
TA=25oC, 10Hz ≤f≤100kHz
60
µVrms
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
Shutdown Pull Down Resis-
tance
3M
Ω
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
oC
Thermal Resistance
θJC
SOT-23-5
150
oC/W
Electrical Characteristics (Continued)
AP2129-ADJ Electrical Characteristics



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