IXZ4DF18N50

RF Power MOSFET & DRIVER

SYMBOL

FUNCTION

DESCRIPTION

Drain

MOSFET Drain Drain of Power MOSFET.

Source

MOSFET Source

Source of Power MOSFET. This connection is common to DGND.

VCC

Driver Section

Supply Voltage

Power supply input for the driver output section. These leads provide power to the output

section of the DEIC515 driver. Both leads must be connected.

VCCIN

Input Section

Supply Voltage

Input for the positive input section power-supply voltage. This lead provide power to the in-

put section of the DEIC515 driver. This lead should not be directly connected to VCC.

IN

Input

Input signal.

DGND

Power Driver

Ground

The system ground leads. Internally connected to all circuitry, these leads provide ground

reference for the entire chip. These leads should be connected to a low noise analog

ground plane for optimum performance.

INGND

Input Section

Ground

The input section ground lead. This lead is a Kelvin connection internally connected to

DGND. This lead must not be connected to DGND as excessive current can damage this

lead.

Lead Description

IXYS RF reserves the right to change limits, test conditions and dimensions without notice.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592

4,860,072

4,881,106

4,891,686

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

5,640,045

6,404,065

6,583,505

6,710,463

6,727,585

6,731,002