IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim, Germany

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYSRF/Directed Energy, Inc.

2401 Research Blvd. Ste 108, Fort Collins, CO 80526

Phone: (970) 493-1901, Fax: 970-493-1903,

www.directedenergy.com

© 2003 IXYSRF/Directed Energy, Inc.

GS8DI25104

IXYSRF reserves the right to change limits, conditions and dimensions.

A = Anode, C = Cathode

I

DC

=4 A

V

RRM

=250 V

C

Gallium Arsenide Schottky Rectifier

Preliminary Data

Symbol

Conditions

Maximum Ratings

I

FAV

T

04

A

I

FAV

T

3.5

A

I

FSM

T

10

A

T

VJ

-55...+175

°C

T

stg

-55...+150

°C

P

tot

T

W

Isolation

(Substrate to Case)

>2500

V

Isolation

(Diode to Diode)

>600

V

Pulse test:

c Pulse Width = 5 ms, Duty Cycle < 2.0 %

Data per diode unless otherwise specified

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

T

25°C V

1.3

mA

T

V

1.3

mA

V

F

I

T

1.3

V

I

T

25°C

1.2

1.5

V

C

J

V

T

9

pF

R

thJC

125

C/W

Features

Low forward voltage

Very high switching speed

Trr <15ns

Low junction capacity of GaAs

- low reverse current peak at turn off

Soft turn off

Temperature independent switching

behaviour

High temperature operation capability

Epoxy meets UL 94V-0

Applications

MHz switched mode power supplies

(SMPS)

High frequency converters

Resonant converters

Isolated Surface Mount Package

A

1

A

2

C

1

C

2

1.

1.

4.

4.

8.

8.

5.

5.

C

1

C

2

TBD