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RKD703KK датащи(PDF) 2 Page - Renesas Technology Corp

номер детали RKD703KK
подробное описание детали  Silicon Schottky Barrier Diode for High Speed Switching
PDF  6 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RKD703KK датащи(HTML) 2 Page - Renesas Technology Corp

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RKD703KK
REJ03G1833-0200 Rev.2.00 Nov 20, 2009
Page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IO*
1
100
mA
Non-Repetitive Peak forward surge current
IFSM *
2
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. See from Fig.4 to Fig.6.
2. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
VF1
—
—
0.25
V
IF = 1 mA
VF2
—
—
0.30
V
IF = 5 mA
VF3
—
—
0.35
V
IF = 20 mA
Forward voltage
VF4
—
—
0.60
V
IF = 100 mA
IR1
—
—
6
μA
VR =10 V
Reverse current
IR2
—
—
50
μA
VR = 30 V
Capacitance
C
—
—
5
pF
VR = 1 V, f = 1 MHz
Thermal resistance
Rth<j-a>
—
600
—
°C/W
Polyimide board *
1
Notes
: 1. Polyimide board
Unit: mm
1.5
20h
×15w×0.8t
1.5
2. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.



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