HAT2202C datasheet(3/7 Pages) RENESAS

номер детали	HAT2202C

подробное описание детали	Silicon N Channel MOS FET Power Switching

PDF	7 Pages

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производитель	RENESAS [Renesas Technology Corp]

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HAT2202C

REJ03G1236-0600 Rev.6.00 Oct 01, 2009

Page 3 of 6

Main Characteristics

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

1.6

1.2

0.8

0.4

100

150

200

0.3

0.1

0.1 0.3

0.03

100

0.03

0.01

100

1.4 V

1.6 V

Pulse Test

2.0 V

120

0.1

100

1000

160

3 A

1.5 A

1.8 V

2.5 V

4.5 V

VGS = 1.2 V

2.5 V

PW = 100

μs

25°C

75°C

ID = 1 A

VGS = 4.5 V

Test Condition :

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

Tc = –25°C

VDS = 10 V

Pulse Test

Ta = 25°C,1shot pulse

When using the FR4 board.

Operation in this area

is limited by R

DS(on)

PW =10

μs

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