R5F363AMDFB datasheet(55/115 Pages) RENESAS

55 / 115 page

REJ03B0271-0100 Rev.1.00 Sep 15, 2009

Page 55 of 113

M16C/63 Group

5. Electrical Characteristics

5.1.5

Flash Memory Electrical Characteristics

Notes:

Set the PM17 bit in the PM1 register to 1 (one wait).

When the frequency is 1.8

≤ V

CC1 ≤ 3.0 V, set the FMR17 bit in the FMR1 register to 0 (one wait) or the PM17 bit

in the PM1 register to 1 (one wait)

Notes:

Definition of program and erase cycles:

The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n

(n = 1,000), each block can be erased n times. For example, if a 64 Kbyte block is erased after writing two word

data 16,384 times, each to a different address, this counts as one program and erase cycles. Data cannot be

written to the same address more than once without erasing the block (rewrite prohibited).

Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing

to sequential addresses in turn so that as much of the block as possible is used up before performing an erase

operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase

operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the

block erase command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support

representative.

The data hold time includes time that the power supply is off or the clock is not supplied.

After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the

erase sequence cannot be completed.

Table 5.9

CPU Clock When Operating Flash Memory (f(BCLK))

VCC1 = 1.8 to 5.5 V, Topr = -20 to 85°C/-40 to 85°C unless otherwise specified.

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

CPU rewrite mode

10 (1)

MHz

f(SLOW_R)

Slow read mode

5MHz

Low current consumption read mode

fC(32.768)

kHz

Data flash read

3.0 V < VCC1 ≤ 5.5 V

20 (2)

MHz

Table 5.10

Flash Memory (Program ROM 1, 2) Electrical Characteristics

VCC1 = 2.7 to 5.5 V at Topr = 0 to 60°C (option: -40°C to 85°C), unless otherwise specified.

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C

1,000 (2)

times

Two words program time

VCC1 = 3.3 V, Topr = 25°C

150

4000

μs

Lock bit program time

VCC1 = 3.3 V, Topr = 25°C

3000

μs

Block erase time

VCC1 = 3.3 V, Topr = 25°C

0.2

3.0

td(SR-SUS)

Time delay from suspend request

until suspend

5 + CPU clock

× 3 cycles

Interval from erase start/restart

until following suspend request

μs

Suspend interval necessary for

auto-erasure to complete (7)

Time from suspend until erase

restart

30 + CPU

clock × 1 cycle

μs

Program, erase voltage

2.7

5.5

Read voltage

2.7

5.5

Program, erase temperature

°C

tPS

Flash Memory Circuit Stabilization Wait Time

μs

Data hold time (6)

Ambient temperature = 55

°C

year

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