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AT25FS010 датащи(PDF) 12 Page - ATMEL Corporation

номер детали AT25FS010
подробное описание детали  High Speed Small Sectored SPI Flash Memory
PDF  24 Pages
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производитель  ATMEL [ATMEL Corporation]
домашняя страница  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT25FS010 датащи(HTML) 12 Page - ATMEL Corporation

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5167E–SFLSH–5/09
AT25FS010
still in progress. If Bit 0=0, the programming cycle has ended. Only the RDSR instruction is
enabled during the programming cycle and all other opcode instructions are ignored until pro-
gramming cycle has completed.
A single PROGRAM instruction programs 1 to 256 consecutive bytes within a page if it is not
write protected. The starting byte address can be anywhere within the page. When the end of
the page is reached, the address will wrap around to the beginning of the same page. If the data
to be programmed is less than a full page, the data of all other bytes on the same page will
remain unchanged meaning that the unwritten address locations within the page will not be
changed. If more than 256 bytes of data are provided, the address counter will roll over on the
same page and the previous data provided will be replaced. The same byte cannot be repro-
grammed without erasing the whole sector or block first. The AT25FS010 will automatically
return to the write disable state at the completion of the programming cycle.
Note:
If the device is not write enabled (WREN), the device will ignore the Write instruction and will
return to the standby state when CS is brought high. A new CS falling edge is required to re-initi-
ate the serial communication.
ERASE OPERATION: The AT25FS010 memory array is internally organized into uniform
4K byte sectors or uniform 32K byte uniform blocks (see Table 4-8). Before data can be
reprogrammed, the sector or block that contains the data must be erased first. In order to
erase the AT25FS010, there are three flexible erase instructions that can be executed as
follows: SECTOR ERASE, BLOCK ERASE and CHIP ERASE instructions. A SECTOR
ERASE instruction allows erasing any individual 4K sector without changing data in rest
of memory. The BLOCK ERASE instruction allows erasing any individual block and CHIP
ERASE allows erasing the entire memory array.
SECTOR ERASE (SECTOR ERASE): The SECTOR ERASE instruction sets all 4K bytes in the
selected sector to logic 1 or erased state. In order to sector erase the AT25FS010, two separate
instructions must be executed. First, the device must be write enabled via the WREN instruction.
Then the SECTOR ERASE instruction can be executed and will erase every byte in the selected
sector if the sector is not locked out. The sector address is automatically determined if any
address within the sector is selected (see Figure 5-10). The SECTOR ERASE instruction is
internally controlled and self timed to completion. During this time, all commands will be ignored
except RDSR instruction. The progress or completion of the erase operation can be determined
by reading ready/busy bit (bit 0) through RDSR instruction. If Bit 0=1, sector erase cycle is in
progress. If Bit 0=0, the erase operation has been completed. The AT25FS010 will automatically
return to the write disable state at the completion of the SECTOR ERASE cycle.
Table 4-7.
Address Key
Address
AT25FS010
AN
A15 - A0
Don’t Care Bits
A23 - A17



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