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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ATmega162 датащи(PDF) 236 Page - ATMEL Corporation |
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ATmega162 датащи(HTML) 236 Page - ATMEL Corporation |
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236 / 324 page  236 2513K–AVR–07/09 ATmega162/V Parallel Programming Enter Programming Mode The following algorithm puts the device in Parallel Programming mode: 1. Apply 4.5 - 5.5V between V CC and GND, and wait at least 100 µs. 2. Set RESET to “0” and toggle XTAL1 at least six times. 3. Set the Prog_enable pins listed in Table 102 on page 235 to “0000” and wait at least 100 ns. 4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V has been applied to RESET, will cause the device to fail entering Programming mode. Considerations for Efficient Programming The loaded command and address are retained in the device during programming. For efficient programming, the following should be considered. • The command needs only be loaded once when writing or reading multiple memory locations. • Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the EESAVE Fuse is programmed) and Flash after a Chip Erase. • Address high byte needs only be loaded before programming or reading a new 256-word window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes reading. Table 104. Command Byte Bit Coding Command Byte Command Executed 1000 0000 Chip Erase 0100 0000 Write Fuse Bits 0010 0000 Write Lock Bits 0001 0000 Write Flash 0001 0001 Write EEPROM 0000 1000 Read Signature Bytes and Calibration byte 0000 0100 Read Fuse and Lock Bits 0000 0010 Read Flash 0000 0011 Read EEPROM Table 105. No. of Words in a Page and no. of Pages in the Flash Flash Size Page Size PCWORD No. of Pages PCPAGE PCMSB 8K words (16K bytes) 64 words PC[5:0] 128 PC[12:6] 12 Table 106. No. of Words in a Page and no. of Pages in the EEPROM EEPROM Size Page Size PCWORD No. of pages PCPAGE EEAMSB 512 bytes 4 bytes EEA[1:0] 128 EEA[8:2] 8 |
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