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TLE7809G датащи(PDF) 43 Page - Infineon Technologies AG |
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TLE7809G датащи(HTML) 43 Page - Infineon Technologies AG |
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43 / 52 page ![]() Data Sheet 43 Rev. 3.01, 2008-04-15 TLE7809G General Product Characteristics 16.4.116 DI hold time t DIHO 50 – – ns – 16.4.117 Input signal rise time at pin DI, CLK and CSN t rIN –– 50 ns – 16.4.118 Input signal fall time at pin DI, CLK and CSN t fIN –– 50 ns – 16.4.119 Delay time for mode change from Normal Mode to Sleep Mode t fIN –– 10 μs– 16.4.120 CSN high time t CSN(high) 10 – – μs– Data Output Timing1) 16.4.121 DO rise time t rDO –30 80 ns C L = 100 pF 16.4.122 DO fall time t fDO –30 80 ns C L = 100 pF 16.4.123 DO enable time t ENDO – – 50 ns low impedance 16.4.124 DO disable time t DISDO – – 50 ns high impedance ADC Measurement Interface (general) 16.4.125 ADC reference voltage V AREF 2.45 2.5 2.55 V 4) interconnect ADC Battery Voltage Measurement Interface, V BAT_SENSE 16.4.126 Max. measurement input voltage (full scale) V bat_fs 19.2 20 20.8 V – 16.4.127 Measurement input impedance R bat_sense 0.8 1.6 2.2 M Ω measurement I/F = on 16.4.128 Vbat_sense input filter bandwidth bw –50 – kHz 1) 16.4.129 Measurement input leakage current I bat_sense -0.5 – 0.5 μA measurement I/F = off; V bat_sense = 13.5 V 16.4.130 Measurement accuracy after μController-based calibration –-300 – 300 mV 4 < V bat_sense < Vbat_fs; V CC ≥ 4.5 V 16.4.131 Settling time Tset –– 30 μs 4) CSN high to settled output voltage V A ADC Temperature Measurement Interface 16.4.132 Temp. Measurement Range T J -40 – 125 °C via on-chip sensor 16.4.133 Temp. sensor offset voltage m0 –3.82 – V 1)V A = m0 - m1 x TJ 16.4.134 Temp. coefficient m1 –5.94 – mV/K 1) Table 14 Electrical Characteristics (cont’d) V S = 13.5 V, Tj = -40 °C to +125 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. |
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