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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IKCS22F60F2C датащи(PDF) 13 Page - Infineon Technologies AG |
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IKCS22F60F2C датащи(HTML) 13 Page - Infineon Technologies AG |
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13 / 18 page  CIPOS™ IKCS22F60F2A IKCS22F60F2C Data Sheet 13/18 Rev. 2.1, July 2009 Characteristics (TC = 25°C, VDD = 15V, if not stated otherwise) 0V 1V 2V 3V 0A 5A 10A 15A 20A 25A 30A 35A 40A 125°C 150°C V GE=25°C 0V 1V 2V 0A 5A 10A 15A 20A 25A 30A 35A 40A 125°C 150°C V GE=25°C VCE, COLLECTOR EMITTER VOLTAGE VF FORWARD VOLTAGE Figure 5. Typical IGBT output characteristic Figure 6. Typical diode forward current as a function of forward voltage 0A 10A 20A 30A 40A 10ns 100ns 1000ns t f t d(on) t r t d(off) 25°C 50°C 75°C 100°C 125°C 100ns 1000ns t f t d(on) t r t d(off) IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE = 300V Dynamic test circuit in Figure A) Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A) |
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