www.clare.com

DS-CPC3703-R03

1

CPC3703

N-Channel Depletion-Mode

Vertical DMOS FETs

RoHS

2002/95/EC

Pb

Part #

Description

CPC3703C

SOT89 (100/Tube)

CPC3703CTR

SOT89 (2000/Reel)

BV

BV

DGX

R

DS(ON)

(max)

I

Package

250V

4

Ω

360mA

SOT-89

Applications

Features

Description

Ordering Information

Circuit Symbol

temperatures

The CPC3703 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance,

for use in high-power applications. The CPC3703

is a highly reliable FET device that has been used

extensively in Clare’s Solid State Relays for industrial

and telecommunications applications.

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3703 offers a low, 4

Ω maximum, on-state

resistance at 25ºC.

The CPC3703 has a minimum breakdown voltage of

250V, and is available in an SOT89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

(SOT89)

G

D

S

D

D

S

G

Package Pinout