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CPC3703 датащи(PDF) 2 Page - Clare, Inc.

номер детали CPC3703
подробное описание детали  N-Channel Depletion-Mode Vertical DMOS FETs
PDF  4 Pages
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производитель  CLARE [Clare, Inc.]
домашняя страница  http://www.clare.com
Logo CLARE - Clare, Inc.

CPC3703 датащи(HTML) 2 Page - Clare, Inc.

  CPC3703 Datasheet HTML 1Page - Clare, Inc. CPC3703 Datasheet HTML 2Page - Clare, Inc. CPC3703 Datasheet HTML 3Page - Clare, Inc. CPC3703 Datasheet HTML 4Page - Clare, Inc.  
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CPC3703
R03
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Ratings
Units
Drain-to-Source Voltage
250
V
Gate-to-Source Voltage
±20
V
Total Package Dissipation 1
1.6
W
Operational Temperature
-55 to +125
ºC
Storage Temperature
-55 to +125
ºC
1 Mounted on 1"x1" FR4 board.
Package
I
D (continuous)
I
D (pulsed)
Power Dissipation
@T
A=25ºC
θ
jc
ºC/W
I
DR
I
DRM
SOT-89
360mA
600mA
1.6W
15
360mA
600mA
Thermal Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
BV
DSX
V
GS= -5V, ID=100µA
250
-
-
V
Gate-to-Source Off Voltage
V
GS(off)
V
DS= 15V, ID=1mA
-1.6
-
-3.9
V
Change in V
GS(off) with Temperature
dV
GS(off) /dT
V
DS= 15V, ID=1mA
-
-
4.5
mV/ºC
Gate Body Leakage Current
I
GSS
V
GS=±20V, VDS=0V
-
-
100
nA
Drain-to-Source Leakage Current
I
D(off)
V
GS= -5V, VDS=Max Rating
-
-
1
µA
V
GS= -5V, VDS=200V, TA=125ºC
-
-
1
mA
Saturated Drain-to-Source Current
I
DSS
V
GS= 0V, VDS=15V
300
-
-
mA
Static Drain-to-Source On-State Resistance
R
DS(on)
V
GS= 0V, ID=200mA
--
4
Ω
Change in R
DS(on) with Temperature
dR
DS(on) /dT
-
-
1.1
%/ºC
Forward Transconductance
G
FS
I
D= 100mA, VDS = 10V
225
-
-
m
Input Capacitance
C
ISS
V
GS= -5V
V
DS= 25V
f= 1MHz
-
327
350
pF
Common Source Output Capacitance
C
OSS
51
65
Reverse Transfer Capacitance
C
RSS
27
35
Turn-ON Delay Time
t
d(on)
V
DD= 25V
I
D= 150mA
V
GS= 0V to -10V
R
GEN= 50Ω
-
23
35
ns
Rise Time
t
r
820
Turn-OFF Delay Time
t
d(off)
17
25
Fall Time
t
f
70
80
Source-Drain Diode Voltage Drop
V
SD
V
GS= -5V, ISD=150mA
-
0.6
1.8
V
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveform & Test Circuit



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