MMBT3906 datasheet(1/3 Pages) DAYA

номер детали	MMBT3906

подробное описание детали	SOT-23 Plastic-Encapsulate Transistors

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производитель	DAYA [Daya Electric Group Co., Ltd.]

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SOT-23 Plastic-Encapsulate Transistors

MMBT3906

TRANSISTOR (PNP)

FEATURES

As complementary type, the NPN transistor

MMBT3904 is Recommended

Epitaxial planar die construction

MARKING: 2A

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.2

A

PC

Collector Power Dissipation

0.3

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -10μA,IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -40V, E=0

-0.1

μA

Collector cut-off current

ICEX

VCE=-30V,VBE(off)=-3V

-50

nA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

hFE(1)

VCE=-1V, IC=-10mA

100

300

hFE(2)

VCE= -1V, IC=-50mA

60

DC current gain

hFE(3)

VCE= -1V, IC=-100mA

30

Collector-emitter saturation voltage

VCE(sat)

IC=-50mA, IB=-5mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=- 50mA, IB=- 5mA

-0.95

V

Transition frequency

fT

VCE=-20V, IC=-10mA, f=100MHz

250

MHz

Delay Time

td

35

nS

Rise Time

tr

VCC=-3.0V,VBE=-0.5V

IC=-10mA,IB1=-1.0mA

35

nS

Storage Time

ts

225

nS

Fall Time

tf

VCC=-3.0V,IC=-10mA

IB1=IB2=-1.0mA

75

nS

CLASSIFICATION OF hFE1

Rank

O

Y

Range

100-200

200-300

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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