MMBTA13 datasheet(1/3 Pages) DAYA

номер детали	MMBTA13

подробное описание детали	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

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производитель	DAYA [Daya Electric Group Co., Ltd.]

домашняя страница	http://www.cndaya.com

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SOT-23 Plastic-Encapsulate Transistors

MMBTA13,14

TRANSISTOR (NPN)

FEATURES

Darlington Amplifier

Marking : MMBTA13:K2D; MMBTA14:K3D

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current -Continuous

0.3

A

PC

Collector Power Dissipation

350

mW

RθJA

Thermal Resistance Junction to Ambient

417

℃/W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 100uA, IB=0

30

V

Collector-emitter breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

10

V

Collector cut-off current

ICBO*

VCB=30 V , IE=0

0.1

μA

Emitter cut-off current

IEBO*

VEB= 10V ,

IC=0

0.1

μA

hFE(1) *

VCE=5V, IC= 10mA

MMBTA13

MMBTA14

5000

10000

DC current gain

hFE(2) *

VCE=5V, IC= 100mA

MMBTA13

MMBTA14

10000

20000

Collector-emitter saturation voltage

VCE (sat)*

IC=100mA, IB=0.1mA

1.5

V

Base-emitter saturation voltage

VBE (sat) *

IC=100mA, IB=0.1mA

2

V

Base-emitter voltage

VBE *

VCE=5V,IC= 100mA

2.0

V

Transition frequency

fT

VCE=5V, IC= 10mA

f=100MHz

125

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

12

pF

* Pulse Test : pulse width≤300μs,duty cycle≤2%.

Unit : mm

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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