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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD75204W15 датащи(PDF) 2 Page - Texas Instruments |
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CSD75204W15 датащи(HTML) 2 Page - Texas Instruments |
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2 / 11 page  CSD75204W15 SLPS221 – OCTOBER 2009.............................................................................................................................................................................................. www.ti.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated). Specifications and graphs are Per MOSFET unless otherwise stated. Drain to Drain measurements are done with both MOSFETs in series (common source configuration. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVD1D2 Drain to Drain Voltage VGS = 0V, ID1D2 = –250μA –20 V BVGSS Gate to Source Voltage VD1D2 = 0V, IG = -250μA -6.1 -7.2 V IDDS Drain to Source Leakage Current VGS = 0V, VD1D2 = –16V –1 μA IGSS Gate to Source Leakage Current VD1D2 = 0V, VGS = -6V –100 nA VGS(th) Gate to Source Threshold Voltage VD1D2 = VGS, IDS = –250μA –0.5 –0.7 –0.9 V VGS = –1.8V, ID1D2 = –1A 140 175 m Ω RD1D2(on) Drain to Drain On Resistance VGS = –2.5V, ID1D2 = –1A 105 130 m Ω VGS = –4.5V, ID1D2 = –1A 80 100 m Ω gfs Transconductance VD1D2 = –10V, ID1D2 = –1A 5.3 S Dynamic Characteristics CISS Input Capacitance 315 410 pF VGS = 0V, VD1D2 = –10V, COSS Output Capacitance 128 165 pF f = 1MHz CRSS Reverse Transfer Capacitance 43 55 pF Qg Gate Charge Total (–4.5V) 2.8 3.9 nC Qgd Gate Charge - Gate to Drain 0.6 nC VD1D2 = –10V, ID1D2 = –1A Qgs Gate Charge - Gate to Source 0.5 nC Qg(th) Gate Charge at Vth 0.2 nC QOSS Output Charge VD1D2 = –9.5V, VGS = 0V 2.2 nC td(on) Turn On Delay Time 7.8 ns tr Rise Time 6.7 ns VD1D2 = –10V, VGS = –4.5V, ID1D2 = –1A, RG = 30Ω td(off) Turn Off Delay Time 45 ns tf Fall Time 26 ns Diode Characteristics VSD Diode Forward Voltage ID1D2 = –1A, VGS = 0V 0.75 1 V Qrr Reverse Recovery Charge Vdd = –9.5V, IF = –1A, di/dt = 200A/μs 10.5 nC trr Reverse Recovery Time Vdd = –9.5V, IF = –1A, di/dt = 200A/μs 23 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT Thermal Resistance Junction to Ambient(1) (2) 200 °C/W R θJA Thermal Resistance Junction to Ambient (3) (2) 94 °C/W (1) Device mounted on FR4 material with Minimum Cu mounting area. (2) Measured with both devices biased in a parallel condition. (3) Device mounted on FR4 material with 1-inch2 of Cu (2oz). 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 |
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