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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLU8729PBF датащи(PDF) 2 Page - International Rectifier |
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IRLU8729PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U8729PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.0 8.9 ––– 8.9 11.9 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 91 ––– ––– S Qg Total Gate Charge ––– 10 16 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.3 ––– nC Qgd Gate-to-Drain Charge ––– 4.0 ––– Qgodr Gate Charge Overdrive ––– 2.6 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.8 ––– Qoss Output Charge ––– 6.3 ––– nC RG Gate Resistance ––– 1.6 2.7 Ω td(on) Turn-On Delay Time ––– 10 ––– tr Rise Time ––– 47 ––– td(off) Turn-Off Delay Time ––– 11 ––– tf Fall Time ––– 10 ––– Ciss Input Capacitance ––– 1350 ––– Coss Output Capacitance ––– 280 ––– Crss Reverse Transfer Capacitance ––– 120 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– (Body Diode) ISM Pulsed Source Current ––– ––– (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 19 29 nC ton Forward Turn-On Time m Ω 58 f 260 µA nA ns pF A VDS = VGS, ID = 25µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C Conditions 5.5 See Fig. 14 Max. 74 20 ƒ = 1.0MHz ID = 20A VDS = 15V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A e VGS = 4.5V, ID = 20A e VGS = 20V VGS = -20V VDS = 15V, ID = 20A VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5Ve RG = 1.8 Ω TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs e TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol ––– VGS = 4.5V Typ. ––– ––– ID = 20A VGS = 0V VDS = 15V |
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