RN2421~RN2427

2001-11-29

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2421,RN2422,RN2423,RN2424

RN2425,RN2426,RN2427

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1421~RN1427

Equivalent Circuit and Bias Resistor Values

°°°°C)

Characteristics

Symbol

Rating

Unit

Collector-Base voltage

−50

V

Collector-Emitter voltage

RN2421~2427

−50

V

RN2421~2424

−10

RN2425, 2426

−5

Emitter-Base voltage

RN2427

−6

V

Collector current

−800

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN2421~2427

−55~150

°C

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Type No.

R1 (kΩ)R2 (kΩ)

RN2421

1

1

RN2422

2.2

2.2

RN2423

4.7

4.7

RN2424

10

10

RN2425

0.47

10

RN2426

1

10

RN2427

2.2

10