 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
LTC4100 датащи(PDF) 3 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC4100 датащи(HTML) 3 Page - Linear Technology |
|
|
3 / 30 page  LTC4100 3 4100fb ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDCIN = 20V, VDD = 3.3V, VBAT = 12V unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Sense Amplifier, CA1 Input Bias Current into BAT Pin 11.66 μA CMSL CA1/I1 Input Common Mode Low ● 0V CMSH CA1/I1 Input Common Mode High VDCIN ≤ 28V ● VCLN–0.2 V Current Comparators ICMP and IREV ITMAX Maximum Current Sense Threshold (VCSP–VBAT)VITH = 2.5V ● 140 165 200 mV ITREV Reverse Current Threshold (VCSP–VBAT)– 30 mV Current Sense Amplifier, CA2 Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V –40 μA Sink Current Measured at ITH, VITH = 1.4V 40 μA Current Limit Amplifier Transconductance 1.5 mmho VCLP Current Limit Threshold ● 93 100 107 mV ICLN CLN Input Bias Current 100 nA Voltage Error Amplifier, EA Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 μA OVSD Overvoltage Shutdown Threshold as a Percent of Programmed Charger Voltage ● 102 107 110 % Input P-Channel FET Driver (INFET) DCIN Detection Threshold (VDCIN–VCLP) DCIN Voltage Ramping Up from VCLP–0.05V ● 0 0.17 0.25 V Forward Regulation Voltage (VDCIN–VCLP) ● 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN–VCLP) ● –60 –25 mV INFET ON Clamping Voltage (VDCIN–VINFET)IINFET = 1μA ● 55.8 6.5 V INFET OFF Clamping Voltage (VDCIN–VINFET)IINFET = –25μA 0.25 V Oscillator fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 % Gate Drivers (TGATE, BGATE) VTGATE High (VCLP-VTGATE)ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLP-VTGATE)CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGTR TGTF TGATE Transition Time TGATE Rise Time TGATE Fall Time CLOAD = 3000pF, 10% to 90% CLOAD = 3000pF, 10% to 90% 50 50 110 100 ns ns BGTR BGTF BGATE Transition Time BGATE Rise Time BGATE Fall Time CLOAD = 3000pF, 10% to 90% CLOAD = 3000pF, 10% to 90% 40 40 90 80 ns ns VTGATE at Shutdown (VCLN-VTGATE)ITGATE = –1μA 100 mV VBGATE at Shutdown ITGATE = 1μA 100 mV |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
