MAC4DCM MAC4DCN

2

Motorola Thyristor Device Data

Characteristics

Symbol

Min

Typ

Max

Unit

Peak Repetitive Blocking Current

(VD = Rated VDRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM

—

—

—

—

0.01

2.0

mA

Peak On–State Voltage (1)

(ITM = ± 6.0 A)

VTM

—

1.3

1.6

Volts

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IGT

8.0

8.0

8.0

12

18

22

35

35

35

mA

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

TJ = 125°C

VGT

0.5

0.5

0.5

0.2

0.8

0.8

0.8

0.4

1.3

1.3

1.3

—

Volts

Holding Current

(VD = 12 V, Gate Open, IT = ± 200 mA)

IH

6.0

22

35

mA

Latching Current (VD = 12 V, IG = 35 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IL

—

—

—

30

50

20

60

80

60

mA

DYNAMIC CHARACTERISTICS

Characteristics

Symbol

Min

Typ

Max

Unit

Rate of Change of Commutating Current (1)

(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/msec, Gate Open,

TJ = 125°C, f = 250 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber)

See Figure 15

di/dt(c)

6.0

8.4

—

A/ms

Critical Rate of Rise of Off–State Voltage

(VD = 0.67 X Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt

500

1700

—

V/

ms

(1) Pulse test: Pulse Width

≤ 2.0 msec, Duty Cycle ≤ 2%.