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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSF4606 датащи(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF4606 датащи(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  SSF4606 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 4606 SSF4606 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V TA=25℃ 6.9 -6 Continuous Drain Current TA=70℃ ID 6.0 -5.0 A Pulsed Drain Current (Note 1) IDM 30 -30 A TA=25℃ 2.0 2.0 Maximum Power Dissipation TA=70℃ PD 1.44 1.44 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ THERMAL CHARACTERISTICS N-Ch 62.5 Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 62.5 /W ℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent R and low gate charge. The DS(ON) complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES ● N-Channel V = 30V,I DS D = 6.9A R < 42mΩ @ V DS(ON) GS=4.5V < 28mΩ @ V RDS(ON) GS=10V ● P-Channel = -30V,I VDS D = -6A R < 58mΩ @ V DS(ON) GS=-4.5V < 35mΩ @ V RDS(ON) GS=-10V Marking and pin Assignment ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SOP-8 top view ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 |
Аналогичный номер детали - SSF4606 |
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Аналогичное описание - SSF4606 |
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