IRF830 datasheet(2/6 Pages) SILIKRON

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IRF830

Electrical Characteristics @TJ=25 ْC(unless otherwise specified)

Parameter

Min. Typ.

Max. Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

500

—

V VGS=0V,ID=250μA

△

V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient

—

0.6

—

V/ْC Reference to 25ْC,ID=250μA

RDS(on)

Static Drain-to-Source On-resistance

—

1.15

1.2

VGS=10V,ID=2.5A ④

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V VDS=VGS,ID=250μA

gfs

Forward Transconductance

—

4.3

—

S VDS=40V,ID=2.25A

IDSS

Drain-to-Source Leakage current

—

VDS=500V,VGS=0V

—

VDS=400V,VGS=0V,TJ=150ْC

IGSS

Gate-to-Source Forward leakage

—

100

VGS=30V

Gate-to-Source Reverse leakage

—

-100

VGS=-30V

Total Gate Charge

—

ID=5A

VDS=400V

VGS=10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on Delay Time

—

VDD=250V

ID=5A

RG=25Ω

Rise Time

—

td(off)

Turn-Off Delay Time

—

Fall Time

—

Ciss

Input Capacitance

—

515

670

VGS=0V

VDS=25V

=1.0MHZ

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

6.5

8.5

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current .

(Body Diode)

—

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode) ①

—

VSD

Diode Forward Voltage

—

1.4

TJ=25ْC,IS=5A,VGS=0V ④

Trr

Reverse Recovery Time

—

300

—

TJ=25ْC,IF=5A

di/dt=100A/μs ④

Qrr

Reverse Recovery Charge

—

1.8

Notes:

①

Repetitive rating; pulse width limited by

③

ISD≤5A,di/dt≤200A/μs, VDD≤V(BR)DSS,

maxIimum. junction temperature

TJ≤25 ْC

②

L = 15mH, IAS =4 A, VDD = 50V,

④

Pulse width≤300μS; duty cycle≤2%

RG = 25Ω

, Starting TJ = 25°C

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