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2N6660CSM4 датащи(PDF) 2 Page - Seme LAB

номер детали 2N6660CSM4
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
PDF  2 Pages
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производитель  SEME-LAB [Seme LAB]
домашняя страница  http://www.semelab.co.uk
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2N6660CSM4 датащи(HTML) 2 Page - Seme LAB

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Document Number 7777
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N6660CSM4
ELECTRICAL CHARACTERISTICS (T
CASE = 25°C unless otherwise stated)
VGS = 0V
ID = 10μA
VDS = VGS
ID = 1.0mA
VGS = ±15V
VDS = 0V
TCASE = 125°C
VDS = 60V
VGS = 0V
VDS = 48V
VGS = 0V
TCASE = 125°C
VDS =>2V
VGS = 10V
VGS = 5V
ID = 0.3A
VGS = 10V
ID = 1.0A
TCASE = 125°C
VGS = 5V
ID = 0.3A
VGS = 10V
ID = 1A
VDS = 25V
ID = 0.5A
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 25V
ID = 1.0A
RL = 23Ω
RG= 25Ω
Modified MOSPOWER
Symbol Showing
The Integral
PN Juncion Rectifier
IS = -1.1A
VGS = 0V
TCASE = 125°C
V(BR)DSS Drain – Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)*
On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS*
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
tON
Turn–On Time
tOFF
Turn–Off Time
IS
Continuous Source Current
(Body Diode)
ISM
Source Current1 (Body Diode)
VSD
Diode Forward Voltage 1
60
100
0.8
1.5
2
±100
±500
10
500
1.5
1.7
4.7
5
2.7
3
3.9
4.2
1.4
1.5
2.7
3
170
195
35
50
33
40
210
810
810
-1.1
-3
-0.9
V
nA
μA
A
Ω
V
ms
pF
ns
A
V
* Pulse Test: tp ≤ 80 μs , δ≤ 1%
Parameter
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance, Junction to Ambient
210
°C/W
RθJC
Thermal Resistance, Junction to Case
20
°C/W
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY-DRAIN DIODE CHARACTERISTICS
STATIC CHARACTERISTICS
,
5
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