MAC15S SERIES

4

Data Sheets

Motorola Thyristor Device Data

100

200

300

400

500

600

700

800

900

1000

60

80

100

120

140

600V

800V

VPK = 400V

TJ = 110°C

Figure 9.0 Typical Exponential Static dv/dt Versus

Gate–MT1 Resistance, MT2(+).

RGK, GATE–MT1 RESISTANCE (OHMS)

400

450

500

550

600

650

700

750

800

50

60

70

80

90

100

110

120

°C

110

°C

TJ = 100°C

RG – MT1 = 510W

Figure 10.0 Typical Exponential Static dv/dt Versus

Peak Voltage, MT2(+).

VPK, Peak Voltage (Volts)

100

105

110

115

120

125

40

50

60

70

80

90

100

110

800V

600V

VPK = 400V

RG – MT1 = 510W

Figure 11.0 Typical Exponential Static dv/dt Versus

Junction Temperature, MT2(+)

TJ, Junction Temperature (°C)

400

450

500

550

600

650

700

750

800

20

40

60

80

100

120

140

160

180

120

°C

110

°C

TJ = 100°C

RG – MT1 = 510W

Figure 12.0 Typical Exponential Static dv/dt Versus

Peak Voltage, MT2(–)

VPK, Peak Voltage (Volts)

100

105

110

115

120

125

0

50

100

150

200

800V

600V

VPK = 400V

RG – MT1 = 510W

Figure 13.0 Typical Exponential Static dv/dt Versus

Junction Temperature, MT2(–)

TJ, Junction Temperature (°C)

1

5

10

15

20

25

1

10

100

(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

110

°C

90

°C

100

°C

f =

1

1000

Figure 14.0 Critical Rate of Rise of

Commutating Voltage