2SC2714 datasheet(1/2 Pages) WEITRON

номер детали	2SC2714

подробное описание детали	NPN General Purpose Transistors

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производитель	WEITRON [Weitron Technology]

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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=10μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=1mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=18V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE(1)

VCE=6V,IC=1mA

40

200

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=1mA

0.3

V

Transition frequency

fT

VCE=6V,IC=1mA

400

MHz

Power Gain

Gpe

VCE=6V,Ic=1mA, f=100HZ

17

pF

Noise figure

NF

VCE=6V,Ic=1mA, f=100HZ

5

dB

CLASSIFICATION OF

hFE(1)

Rank

R

O

Y

Range

40-80

70-140

100-200

Marking

QR

QO

QY

http://www.weitron.com.tw

WEITRON

SOT-23

2SC2714

NPN General Purpose Transistors

1/2

19-Feb-09

P b Lead(Pb)-Free

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