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MCP14700T-E/MF датащи(PDF) 9 Page - Microchip Technology

номер детали MCP14700T-E/MF
подробное описание детали  Dual Input Synchronous MOSFET Driver
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP14700T-E/MF датащи(HTML) 9 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22201A-page 9
MCP14700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
3.1
Switch Node (PHASE)
The PHASE pin provides a return path for the high-side
gate driver. The source of the high-side and the drain of
the low-side power MOSFETs are connected to this
pin.
3.2
High-Side PWM Control Input
Signal (PWMHI)
The PWM input signal to control the high-side power
MOSFET is applied to the PWMHI pin. A logic high on
the PWMHI pin causes the HIGHDR pin to also
transition high.
3.3
Low-Side PWM Control Input
Signal (PWMLO)
The PWM input signal to control the low-side power
MOSFET is applied to the PWMLO pin. A logic high on
the PWMLO pin causes the LOWDR pin to also
transition high.
3.4
Ground (GND)
The GND pin provides ground for the MCP14700
circuitry. It should have a low-impedance connection to
the bias supply source return. High peak currents will
flow out the GND pin when the low-side power
MOSFET is being turned off.
3.5
Low-side Gate Drive (LOWDR)
The LOWDR pin provides the gate drive signal to
control the low-side power MOSFET. The gate of the
low-side power MOSFET is connected to this pin.
3.6
Supply Input Voltage (VCC)
The VCC pin provides bias to the MCP14700 device. A
bypass capacitor is to be placed between this pin and
the GND pin. This capacitor should be placed as close
to the MCP14700 as possible.
3.7
Floating Bootstrap Supply (BOOT)
The BOOT pin is the floating bootstrap supply pin for
the high-side gate drive. A capacitor is connected
between this pin and the PHASE pin to provide the
necessary charge to turn on the high-side power
MOSFET.
3.8
High-Side Gate Drive (HIGHDR)
The HIGHDR pin provides the gate drive signal to
control the high-side power MOSFET. The gate of the
high-side power MOSFET is connected to this pin.
3.9
Exposed Metal Pad (EP)
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
TABLE 3-1:
PIN FUNCTION TABLE
MCP14700
Symbol
Description
3x3 DFN
SOIC
1
1
PHASE
Switch Node
22
PWMHI
High-Side PWM Control Input Signal
33
PWMLO
Low-Side PWM Control Input Signal
4
4
GND
Ground
5
5
LOWDR
Low-side Gate Drive
66
VCC
Supply Input Voltage
7
7
BOOT
Floating Bootstrap Supply
8
8
HIGHDR
High-Side Gate Drive
9
EP
Exposed Metal Pad



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