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MCP14700 датащи(PDF) 13 Page - Microchip Technology |
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MCP14700 датащи(HTML) 13 Page - Microchip Technology |
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13 / 26 page ![]() © 2009 Microchip Technology Inc. DS22201A-page 13 MCP14700 5.0 APPLICATION INFORMATION 5.1 Bootstrap Capacitor Select The selection of the bootstrap capacitor is based upon the total gate charge of the high-side power MOSFET and the allowable droop in gate drive voltage while the high-side power MOSFET is conducting. EQUATION 5-1: For example: QGATE = 30 nC ΔV DROOP = 200 mV CBOOT ≥ 0.15 uF A low ESR ceramic capacitor is recommend with a maximum voltage rating that exceeds the maximum input voltage, VCC, plus the maximum supply voltage, VSUPPLY. It is also recommended that the capacitance of CBOOT does not exceed 1.2 uF. 5.2 Decoupling Capacitor Proper decoupling of the MCP14700 is highly recommended to help ensure reliable operation. This decoupling capacitor should be placed as close to the MCP14700 as possible. The large currents required to quickly charge the capacitive loads are provided by this capacitor. A low ESR ceramic capacitor is recommended. 5.3 Power Dissipation The power dissipated in the MCP14700 consists of the power loss associated with the quiescent power and the gate charge power. The quiescent power loss can be calculated by the following equation and is typically negligible compared to the gate drive power loss. EQUATION 5-2: The main power loss occurs from the gate charge power loss. This power loss can be defined in terms of both the high-side and low-side power MOSFETs. EQUATION 5-3: C BOOT Q GATE V Δ DROOP ----------------------------- ≥ Where: CBOOT = Bootstrap capacitor value QGATE = Total gate charge of the high-side MOSFET ΔV DROO = Allowable gate drive voltage droop P Q I VCC V CC × = Where: PQ = Quiescent power loss IVCC = No Load Bias Current VCC = Bias Voltage P GATE P HIGHDR P LOWDR + = P HIGHDR V CC Q HIGH × F SW × = P LOWDR V CC Q LOW × F SW × = Where: PGATE = Total Gate Charge Power Loss PHIGHDR = High-Side Gate Charge Power Loss PLOWDR = Low-Side Gate Charge Power Loss VCC = Bias Supply Voltage QHIGH = High-Side MOSFET Total Gate Charge QLOW = Low-Side MOSFET Total GAte Charge FSW = Switching Frequency |
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