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SSM6J409TU датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали SSM6J409TU
подробное описание детали  Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
PDF  6 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6J409TU датащи(HTML) 2 Page - Toshiba Semiconductor

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SSM6J409TU
2009-04-08
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V (BR) DSS ID = -1 mA, VGS = 0 V
-20
⎯
⎯
Drain-Source breakdown voltage
V (BR) DSX ID = -1 mA, VGS = +8 V
-12
⎯
⎯
V
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
⏐Yfs⏐
VDS = -3 V, ID = -3.0 A
(Note 3)
10
20
⎯
S
ID = -3.0 A, VGS = -4.5 V
(Note 3)
⎯
17.8
22.1
ID = -2.0 A, VGS = -2.5 V
(Note 3)
⎯
23.5
30.2
ID = -1.5 A, VGS = -1.8 V
(Note 3)
⎯
31.5
46.2
Drain–source ON-resistance
RDS (ON)
ID = -0.8 A, VGS = -1.5 V
(Note 3)
⎯
40.0
72.3
m
Ω
Input capacitance
Ciss
⎯
1100
⎯
Output capacitance
Coss
⎯
240
⎯
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0 V, f = 1 MHz
⎯
180
⎯
pF
Total Gate Charge
Qg
⎯
15.0
⎯
Gate-Source Charge
Qgs
⎯
10.9
⎯
Gate-Drain Charge
Qgd
VDD = −10 V, ID = −9.5 A
VGS = −4.5 V
⎯
4.1
⎯
nC
Turn-on time
ton
⎯
40
⎯
Switching time
Turn-off time
toff
VDD = -10 V, ID = -2.0 A,
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
207
⎯
ns
Drain-Source forward voltage
VDSF
ID = 9.5 A, VGS = 0 V
(Note 3)
⎯
0.83
1.2
V
Note3: Pulse test
Switching Time Test Circuit
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
(c)
V
tf
ton
90%
10%
0 V
−2.5 V
90%
10%
toff
tr
VDS (ON)
VDD
(b) VIN
VDD = − 10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta
= 25°C
VDD
OUT
IN
0
−2.5 V
10
μs
RG
ID
(a) Test Circuit



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