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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCP73871 датащи(PDF) 6 Page - Microchip Technology |
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MCP73871 датащи(HTML) 6 Page - Microchip Technology |
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6 / 38 page  MCP73871 DS22090B-page 6 © 2009 Microchip Technology Inc. Input Current Limit Control (ICLC) USB-Port Supply Current Limit ILIMIT_USB 80 90 100 mA PROG2 = Low, SEL = Low 400 450 500 mA PROG2 = High, SEL = Low TA=-5°C to +55°C AC-DC Adapter Current Limit ILIMIT_AC 1500 1650 1800 mA SEL = High, TA=-5°C to +55°C Voltage Proportional Charge Control (VPCC - Input Voltage Regulation) VPCC Input Threshold VVPCC —1.23 — V IOUT=10 mA VPCC Input Threshold Tolerance VRTOL -3 — +3 % TA=-5°C to +55°C Input Leakage Current ILK —0.01 1 µA VVPCC = VDD Precondition Current Regulation (Trickle Charge Constant-Current Mode) Precondition Current Ratio IPREG / IREG 7.5 10 12.5 % PROG1 = 1.0 k Ω to 10 kΩ TA=-5°C to +55°C Precondition Current Threshold Ratio VPTH / VREG 69 72 75 % VBAT Low-to-High Precondition Hysteresis VPHYS — 105 — mV VBAT High-to-Low Automatic Charge Termination Set Point Charge Termination Current Ratio ITERM 75 100 125 mA PROG3 = 10 k Ω 7.5 10 12.5 mA PROG3 = 100 k Ω TA=-5°C to +55°C Automatic Recharge Recharge Voltage Threshold Ratio VRTH VREG - 0.21V VREG - 0.15V VREG - 0.09V VVBAT High-to-Low IN-to-OUT Pass Transistor ON-Resistance ON-Resistance RDS_ON — 200 — m Ω VDD = 4.5V, TJ = 105°C Charge Transistor ON-Resistance ON-Resistance RDSON_ — 200 — m Ω VDD = 4.5V, TJ = 105°C BAT-to-OUT Pass Transistor ON-Resistance ON-Resistance RDS_ON — 200 — m Ω VDD = 4.5V, TJ = 105°C Battery Discharge Current Output Reverse Leakage Current IDISCHARGE — 30 40 µA Shutdown (VBAT < VDD < VUVLO) — 30 40 µA Shutdown (0 < VDD < VBAT) —30 40 µA VBAT = Power Out, No Load — -6 -13 µA Charge Complete Status Indicators - STAT1 (LBO), STAT2, PG Sink Current ISINK —16 35 mA Low Output Voltage VOL —0.4 1 V ISINK = 4 mA Input Leakage Current ILK — 0.01 1 µA High Impedance, VDD on pin Low Battery Indicator (LBO) Low Battery Detection Threshold VLBO —Disable — VBAT > VIN, PG = Hi-Z 2.85 3.0 3.15 V TA=-5°C to +55°C 2.95 3.1 3.25 V 3.05 3.2 3.35 V Low Battery Detection Hysteresis VLBO_HYS — 150 — mV VBAT Low-to-High DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for V IN = VREG + 0.3V to 6V, TA = -40°C to +85°C. Typical values are at +25°C, VIN = [VREG (typical) + 1.0V] Parameters Sym Min Typ Max Units Conditions Note 1: The value is ensured by design and not production tested. 2: The maximum available charge current is also limited by the value set at PROG1 input. |
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