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MCP1802 датащи(PDF) 17 Page - Microchip Technology

номер детали MCP1802
подробное описание детали  300 mA, High PSRR, Low Quiescent Current LDO
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1802 датащи(HTML) 17 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22053B-page 17
MCP1802
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1802 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1802 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(25.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating temperature
specified for the MCP1802 is +85°C. To estimate the
internal junction temperature of the MCP1802, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R
θJA). The thermal
resistance from junction to ambient for the SOT-23-5
package is estimated at 256°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type =
SOT-23-5
Input Voltage Range =
2.4V to 5.0V
VIN maximum =
5.0V
VOUT typical =
1.8V
IOUT =50 mA maximum
MCP1802
GND
VOUT
VIN
CIN
1µF
COUT
1 µF Ceramic
VOUT
VIN
2.4V to 5.0V
1.8V
IOUT
50 mA
SHDN
Ceramic
NC
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
() I
OUT MAX
)
()
×
=
Where:
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
Where:
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
R
θJA = Thermal resistance from
junction to ambient
TAMAX = Maximum ambient temperature
P
DMAX
()
T
JMAX
()
T
AMAX
()
()
R
θ
JA
---------------------------------------------------
=
Where:
PD(MAX) = Maximum device power
dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX) = Maximum ambient temperature
R
θJA = Thermal resistance from
junction to ambient
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
Where:
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
PTOTAL = Maximum device power
dissipation
R
θJA = Thermal resistance from
junction to ambient
T
J
T
JRISE
()
T
A
+
=
Where:
TJ = Junction Temperature
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
TA = Ambient temperature



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