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MCP1802 датащи(PDF) 17 Page - Microchip Technology |
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MCP1802 датащи(HTML) 17 Page - Microchip Technology |
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17 / 26 page ![]() © 2009 Microchip Technology Inc. DS22053B-page 17 MCP1802 6.0 APPLICATION CIRCUITS & ISSUES 6.1 Typical Application The MCP1802 is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1802 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (25.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating temperature specified for the MCP1802 is +85°C. To estimate the internal junction temperature of the MCP1802, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θJA). The thermal resistance from junction to ambient for the SOT-23-5 package is estimated at 256°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: EQUATION 6-4: EQUATION 6-5: Package Type = SOT-23-5 Input Voltage Range = 2.4V to 5.0V VIN maximum = 5.0V VOUT typical = 1.8V IOUT =50 mA maximum MCP1802 GND VOUT VIN CIN 1µF COUT 1 µF Ceramic VOUT VIN 2.4V to 5.0V 1.8V IOUT 50 mA SHDN Ceramic NC P LDO V IN MAX ) () V OUT MIN () – () I OUT MAX ) () × = Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage T JMAX () P TOTAL R θ JA × T AMAX + = Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation R θJA = Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature R θJA = Thermal resistance from junction to ambient T JRISE () P DMAX () R θ JA × = Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PTOTAL = Maximum device power dissipation R θJA = Thermal resistance from junction to ambient T J T JRISE () T A + = Where: TJ = Junction Temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature |
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