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2SC5612 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC5612 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() 2SC5612 2006-11-22 2 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut−off Current ICBO VCB = 2000 V, IE = 0 ― ― 1 mA Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 100 µA Collector−Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 900 ― ― V hFE (1) VCE = 5 V, IC = 2 A 15 ― 50 hFE (2) VCE = 5 V, IC = 9 A 9.5 ― 18.5 DC Current Gain hFE (3) VCE = 5 V, IC = 17 A 4.8 ― 9.0 ― Collector−Emitter Saturation Voltage VCE (sat) IC = 17 A, IB = 4.25 A ― ― 3 V Base−Emitter Saturation Voltage VBE (sat) IC = 17 A, IB = 4.25 A ― ― 1.3 V Transition Frequency fT VCE = 10 V, IC = 0.1 A ― 2 ― MHz Collector Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 470 ― pF Storage Time tstg ― 4.0 5.0 Switching Time Fall Time tf ICP = 8 A, IB1 (end) = 1A fH = 32 kHz ― 0.15 0.35 µs MARKING 2SC5612 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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