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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F102C6T6ATR датащи(PDF) 26 Page - STMicroelectronics |
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STM32F102C6T6ATR датащи(HTML) 26 Page - STMicroelectronics |
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26 / 69 page  Electrical characteristics STM32F102x4, STM32F102x6 26/69 Doc ID 15057 Rev 3 Table 6. Current characteristics Symbol Ratings Max. Unit IVDD Total current into VDD/VDDA power lines (source) (1) 1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 150 mA IVSS Total current out of VSS ground lines (sink) (1) 150 IIO Output current sunk by any I/O and control pin 25 Output current source by any I/Os and control pin 25 IINJ(PIN) (2)(3) 2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. 3. Negative injection disturbs the analog performance of the device. See note in Section 5.3.16: 12-bit ADC characteristics. Injected current on NRST pin ± 5 Injected current on High-speed external OSC_IN and Low- speed external OSC_IN pins ± 5 Injected current on any other pin(4) 4. When several inputs are submitted to a current injection, the maximum I INJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). These results are based on characterization with I INJ(PIN) maximum current injection on four I/O port pins of the device. ± 5 I INJ(PIN) (2) Total injected current (sum of all I/O and control pins)(4) ± 25 Table 7. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C |
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