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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C4 датащи(PDF) 74 Page - STMicroelectronics |
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STM8L151C4 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 101 page  Electrical parameters STM8L151xx, STM8L152xx 74/101 Doc ID 15962 Rev 2 8.3.6 I/O port pin characteristics General characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. All unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor. Table 32. I/O static characteristics (1) Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(2) Input voltage on true open-drain pins (PC0 and PC1) VSS -0.3 0.3 x VDD V Input voltage on FT pins (PA7 and PE0) VSS -0.3 0.3 x VDD Input voltage on any other pin VSS -0.3 0.3 x VDD VIH Input high level voltage (2) Input voltage on true open-drain pins (PC0 and PC1) 0.70 x VDD VDD+3.6 V Input voltage on FT pins (PA7 and PE0) 0.70 x VDD VDD+3.6 Input voltage on any other pin 0.70 x VDD VDDmax+0.3 Vhys Schmitt trigger voltage hysteresis (3) Standard I/Os 200 mV True open drain I/Os 250 Ilkg Input leakage current (4) VSS≤VIN≤VDD Standard I/Os -- 50 (5) nA VSS≤VIN≤VDD True open drain I/Os - - 200(5) VSS≤VIN≤VDD PA0 with high sink LED driver capability - - 200(5) RPU Weak pull-up equivalent resistor(6) VIN=VSS 30 45 60 k Ω CIO (7) I/O pin capacitance 5 pF 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Not tested in production. 6. RPU pull-up equivalent resistor based on a resistive transistor. 7. Data guaranteed by Design, not tested in production. |
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