STC4516 datasheet(3/9 Pages) STANSON

номер детали	STC4516

подробное описание детали	Complementary Dual Enhancement Mode MOSFET

PDF	9 Pages

Scroll/Zoom	100%

производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

Logo

3 / 9 page

STC4516

Complementary Dual Enhancement Mode MOSFET

8.5A for N Channel / -7.2A for P Channl

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STC4516 2008 V1

ELECTRICAL CHARACTERISTICS ( Ta = 25

Unless otherwise noted )

℃

P-Channel

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1.0

-3.0

Gate Leakage Current

IGSS

VDS=0V,VGS=+20V

+100

VDS=-30V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-30V,VGS=0V

TJ=55℃

-5

On-State Drain Current

ID(on)

VDS≥-5V,VGS=-10V

-40

Drain-source On-Resistance

RDS(on)

VGS=-10V,ID=-7.2A

VGS=-4.5V,ID=-5.6A

0.022

0.030

Forward Transconductance

gfs

VDS=-10V,ID=-7.2A

Diode Forward Voltage

VSD

IS=-2.3A,VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-15V,VGS=-10V

ID=-7.2A

4.5

Input Capacitance

Ciss

1650

Output Capacitance

Coss

350

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V

f=1MHz

235

Turn-On Time

Td(on)

110

Turn-Off Time

Td(off)

VDD=-15V,RL=15Ω

ID=-1A,VGEN=-10V

RG=6Ω

STC4516 датащи(PDF) 3 Page - Stanson Technology

STC4516 датащи(HTML) 3 Page - Stanson Technology

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL