ST3402

N Channel Enhancement Mode MOSFET

4A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST3402 2006. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max

Unit

Static

Drain-Source Breakdown

Voltage

30

V

Gate Threshold Voltage

0.8

1.6

V

Gate Leakage Current

±

100

nA

1

Zero Gate Voltage Drain

Current

10

uA

On-State Drain Current

4

A

Drain-source On-Resistance

48

53

80

58

65

105

mΩ

Forward Transconductance

12

S

Diode Forward Voltage

0.8

1.2

V

Dynamic

Total Gate Charge

4.2

6

Gate-Source Charge

0.6

Gate-Drain Charge

1.5

nC

Input Capacitance

350

Output Capacitance

55

Reverse Transfer Capacitance

41

pF

2.5

Turn-On Time

tr

2.5

20

Turn-Off Time

tf

4

nS