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ST2301MSRG датащи(PDF) 3 Page - Stanson Technology

номер детали ST2301MSRG
подробное описание детали  P Channel Enhancement Mode MOSFET
PDF  7 Pages
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производитель  STANSON [Stanson Technology]
домашняя страница  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST2301MSRG датащи(HTML) 3 Page - Stanson Technology

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ST2301M
P Channel Enhancement Mode MOSFET
-3.0A
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
3
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA -0.48
-1.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±
100
nA
VDS=-20V,VGS=0V
-1
Zero Gate Voltage Drain
Current
IDSS
VDS=-20V,VGS=0V
TJ=55℃
-10
uA
On-State Drain Current
ID(on)
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
-6
-3
A
Drain-source On-Resistance
RDS(on)
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
0.135
0.220
Ω
Forward Transconductance
gfs
VDS=-5V,ID=-2.8V
6.5
S
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-0.8 -1.2
V
Dynamic
Total Gate Charge
Qg
4.8
8
Gate-Source Charge
Qgs
0.75
Gate-Drain Charge
Qgd
VDS=-6V
VGS=-4.5V
ID≣-2.8A
1.4
nC
Input Capacitance
Ciss
35
Output Capacitance
Coss
150
Reverse Transfer
Capacitance
Crss
VDS=-6V
VGS=0V
F=1MHz
60
pF
10
20
Turn-On Time
td(on)
tr
32
45
38
55
Turn-Off Time
td(off)
tf
VDD=-6V
RL=6Ω
ID=-1A
VGEN=-4.5V
RG=6Ω
30
50
nS



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