ST2301A

P Channel Enhancement Mode MOSFET

-3.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2301A 2005. V1

DESCRIPTION

ST2301A is the P-Channel logic enhancement mode power field effect transistor which is

produced using high cell density, DMOS trench technology.This high density process is

especially tailored to minimize on-state resistance.These devices are particularly suited for

low voltage application such as cellular phone and notebook computer power management,

other battery powered circuits, and low in-line power loss are required. The product is in

a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2301SRG

SOT-23

S01YA

※

Process Code ∶ A ~ Z ; a ~ z

※

ST2301SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free

FEATURE

-

Super high density cell design for

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

3

1

2

D

G

S

3

1

2

S01YA