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SC8821 датащи(PDF) 3 Page - Silan Microelectronics Joint-stock |
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SC8821 датащи(HTML) 3 Page - Silan Microelectronics Joint-stock |
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3 / 9 page ![]() SC8821 Characteristics Symbol Conditions Min. Typ. Max. Unit Low equivalent on-resistance N-type MOSFET VG=0V,ID=250 μA 20.6 V Drain-Source Breakdown Voltage BVDSS VG=0V,ID=1 μA 20 V VG=0V,VD=20.6V 250 μA Drain-Source Breakdown Current IDSS VG=0V,VD=20V 1 μA Threshold Voltage VTH VG=VD,ID=250 μA 0.62 1.455 V VG=2.5V, ID=3A 39.6 m Ω VG=4.5V, ID=1A 30 m Ω Source-Drain On-Resistance RDSON VG=4.5V, ID=3A 27.7 m Ω PIN CONFIGURATION PIN DESCRIPTIONS PIN No. Symbol I/O Description 1 VSS I Negative power input pin 2, 3 VDD I Positive power input pin 4 CSI I/O Current detection input 5 TD I Time delay testing terminal 6, 7 BATN I/O Negative terminal of charger or load 8 DRAIN I/O The common drain of the two N-type MOSFET FUNCTION DESCRIPTIONS Normal State Refer to the typical application circuit. If VODL<VDD<VOCU and VCH<VCSI<VOI1, the charging and discharging processes between VBAT+ and VBAT- can be operated normally. Overcharge Detection When enters charging state from normal state, the battery voltage can be detected from VDD. When the charger is connected between VBAT+ and VBAT-, if VDD is larger than VOCU over a delay time of TOC, then the battery voltage enters the overcharge state, VBAT- current is 0 and stop charging. HANGZHOU MICROELECTRONICS CO.,LTD REV:1.2 2009.05.05 Http: //www.silan.com.cn Page 3 of 10 |
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