1

Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington

Transistors with Base-Emitter

Speedup Diode

The BUT34 Darlington transistor is designed for high–voltage, high–speed, power

switching in inductive circuits where fall time is critical. They are particularly suited for

line–operated SWITCHMODE applications such as:

• AC and DC Motor Controls

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Fast Turn–Off Times

0.7

µs Inductive Fall Time at 25_C (Typ)

1.8

µs Inductive Storage Time at 25_C (Typ)

• Operating Temperature Range –65 to 200_C

MAXIMUM RATINGS

Rating

Symbol

BUT34

Unit

Collector–Emitter Voltage

VCEO(sus)

500

Vdc

Collector–Emitter Voltage

VCEV

850

Vdc

Emitter–Base Voltage

VEB

10

Vdc

Collector Current — Continuous

IC

ICM

50

75

Adc

Base Current — Continuous

IB

IBM

10

15

Adc

Free Wheel Diode Forward Current — Continuous

IF

IFM

50

75

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25

_C

PD

250

140

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

_C/W

Maximum Lead Temperature for Soldering Purpose:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

x10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUT34/D

BUT34

50 AMPERES

NPN SILICON

POWER DARLINGTON

TRANSISTOR

850 VOLTS

250 WATTS

CASE 197A–05

TO–204AE

(TO–3)

≈ 50

≈ 8

REV 7