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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS4SD4M16DG-10/IT датащи(PDF) 21 Page - Austin Semiconductor |
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AS4SD4M16DG-10/IT датащи(HTML) 21 Page - Austin Semiconductor |
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21 / 50 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD4M16 AS4SD4M16 Rev. 2.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 21 Austin Semiconductor, Inc. Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW at that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is shown in Figure 19, where data n is the last desired data element of a longer burst. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (t RP ) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. POWER-DOWN Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND INHIBIT when no accesses are in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in either bank, this mode is referred to as active power-down. Entering power- down deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. The device may not remain in the power-down state longer than the refresh period (64ms/16ms) since no refresh operations are performed in this mode. The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE HIGH at the desired clock edge (meeting t CKS ). T0 T1 T2 WRITE CLK COMMAND ADDRESS DQ 12345 12345 12345 12345 12345 12345 12345 12345 12 12 12 BANK, COL n NEXT COMMAND 12345 12345 12345 12345 123456 123456 123456 123456 123 123 123 123 D IN n 123456 123456 123456 123456 NOTE: DQMs is LOW. Figure 19 TERMINATING A WRITE BURST BURST TERMI- NATE (ADDRESS) (DATA) CLK CKE COMMAND tCKS >tCKS NOP 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 1234 1234 1234 1234 1234 1234 1234 1234 1234 1234 1234 1234 NOP ACTIVE tRCD tRC t RAS Input buffers gated off All banks idle Enter power-down mode. Exit power-down mode. 1234 1234 1234 1234 DON’T CARE Figure 21 POWER-DOWN CLK CKE HIGH CS\ 12345678 12345678 12345678 123456789012 123456789012 123456789012 1 1 1 12 12 12 12345 12345 12345 12345678901 12345678901 12345678901 12 12 12 12 12 12 RAS\ CAS\ WE\ 1234567890123456 1234567890123456 12 12 123456789012345678901234 123456789012345678901234 12 12 123 123 123 1234567890123456 1234567890123456 1234567890123456 12 12 12 12 12 12 123 123 123 123456789012 123456789012 123456789012 12 12 12 1 1 A0-A9 BA BANK ADDRESS Figure 20 PRECHARGE COMMAND 123 123 123 123456789012345 123456789012345 123456789012345 12 12 12 12 12 12 123 123 123 123456789012 123456789012 123456789012 12 12 12 1 1 1 A10 12345678 12345678 12345678 123456789012 123456789012 123456789012 1 1 1 12 12 12 12345 12345 12345 12345678901 12345678901 12345678901 12 12 12 12 12 12 12345 12345 12345 12345678 12345678 12345678 12345678 12345678 12345678 1 1 1 1 1 1 1 12345678901234 12345678901234 12345678901234 12 12 12 12 12 12 12345678 12345678 123456789012 123456789012 1 1 12 12 12345 12345 12345678901 12345678901 1 1 12 12 12 12 BANK SELECTED ALL BANKS |
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