16 Me

16 Me

16 Me

16 Me

16 Meg FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

AS4LC4M4

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

5

AS4LC4M4

Rev. 0.3 7/06

Austin Semiconductor, Inc.

(CONTINUED)

MIN

MAX

MIN

MAX

Data set-up time

0

ns

9

Data hold time

10

ns

9

Refresh period

128

ms

Write command set-up time

0

ns

7

CAS\ to W\ delay time

40

ns

7

RAS\ to W\ delay time

85

ns

7

Column address to W\ delay time

55

ns

7

CAS\ precharge to W\ delay time

60

ns

CAS\ set-up time (CAS\-before-RAS\ refresh)

5

ns

CAS\ hold time (CAS\-before-RAS\ refresh)

10

ns

RAS\ to CAS\ precharge time

5

ns

Access time from CAS\ precharge

35

ns

3

Fast Page cycle time

40

ns

Fast Page read-modify-write cycle time

85

ns

CAS\ precharge time (Fast Page Cycle)

10

ns

RAS\ pulse width (Fast Page Cycle)

60

200K

ns

RAS\ hold time from CAS\ precharge

35

ns

OE\ access time

15

ns

OE\ to data delay

15

ns

Output buffer turn off delay time from OE\

0

15

ns

6

OE\ command hold time

15

ns

Write command set-up time (Test mode in)

10

ns

11

Write command hold time (Test mode in)

10

ns

11

W\ to RAS\ precharge time (C\-B-R\ refresh)

10

ns

W\ to RAS\ hold time (C\-B-R\ refresh)

10

ns

RAS\ pulse width (C\-B-R\ self refresh)

100

us

13, 14, 15

RAS\ precharge time (C\-B-R\ self refresh)

110

ns

13, 14, 15

CAS\ hold time (C\-B-R\ self refresh)

-50

ns

13, 14, 15

UNITS

NOTES

SYMBOL

PARAMETER

-60

-70