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AS4SD16M72PBG-75/ET датащи(PDF) 3 Page - Austin Semiconductor |
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AS4SD16M72PBG-75/ET датащи(HTML) 3 Page - Austin Semiconductor |
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3 / 16 page ![]() Austin Semiconductor, Inc. Proprietary Material ASI Product Marketing Specifies the type of burst (sequential or interleaved), M4-M6 specify the CAS latency, M7 and M8 specify the operating mode, M9 specifies the WRITE BURST mode and M10, M11 are reserved for future use. Address A12 (M12) is undefined but should be driven LOW during loading of the MODE REGISTER. The MODE REGISTER must be loaded when all banks are idle, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. Burst Length READ and WRITE accesses to the SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1,2,4 and 8 locations are available for both the sequential and the interleaved burst types, and a full page burst is available for the sequential burst mode. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. Reserved states should not be used, aas unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst will wrap within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A2-A8 (each x16) when the burst length is set to four; and by A3-A8 (each x16) when the burst length is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached. CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of first valid data presented on the Output bus (DQ0-DQ79). The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge N + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, If a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will be valid by T2. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test Modes and reserved states should not be used because unknown operation or incompatibility with future version may result. Write Burst Mode When M9=0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9=1, the programmed burst length applies to READ bursts, but WRITE accesses are single-location (non-burst) accesses. Command Inhibit The COMMAND INHIBIT function prevents new commands from being executed by the SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively deselected. Operations already in progress are not affected. No Operation (NOP) The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM which is selected (CS\ is LOW). This prevents unwanted commands from being registered during IDLE or WAIT states. Operations already in progress are not affected. AS4SD16M72PBG-s/IT,ET,XT 16M x 72, SDR SDRAM, 3.3v Core/ 3.3v IO |
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