PI2001 datasheet(18/23 Pages) VICOR

18 / 23 page

4. SP and SN pins: Since the PI2001 controller

GND pin is connected to the input (Vin) which is

also the MOSFET source, connect the SP pin

directly to the PI2001 GND pin to reduce the

parasitic between the SP pin and the GND pin to

avoid negative voltages on the SP pin with

respect to GND pin. Connect the SN pin to the

MOSFET drain pin.

5. BK pin: Connect the BK pin to the GND pin to

achieve the minimum reverse current response

time.

SL pin: Not required, so leave floating.

FT pin: The FT pin output is referenced to the

PI2001 GND pin which is connected to Vin. A

level shift circuit can be added to make the FT

pin output referenced to the system ground. The

recommended level shift circuit is shown in Figure

16, The level shift circuit uses a Dual Bias

Resistor Transistor circuit which is available as a

small device that contains two transistors and

their

bias

resistors,

part

number

NSBC114EPDXV6T1.

8. UV and OV inputs: In floating applications these

pins can not be used to monitor Vin. Connect UV

to the VC pin and OV to the GND pin to disable

their function.

Typical application Example 3:

Requirement:

Redundant Bus Voltage = -48V (-36V to -60V, 100V

for 100ms transient)

Load Current = 5A load (assume through each

redundant path)

Maximum Ambient Temperature = 60°C

Solution:

1. A single PI2001 with a suitable MOSFET for each

redundant -48V power source should be used and

configured as shown in figure 17. The VC is

biased from the return line through a bias resistor.

2. Select a suitable N-Channel MOSFET: Select

the N-Channel MOSFET with voltage rating higher

than the input voltage, Vin, plus any expected

transient voltages, with a low Rds(on) that is

capable of supporting the full load current with

margin. For instance, a 100V rated MOSFET with

10A current capability is suitable. An exemplary

MOSFET having these characteristic is Si4486EY

from Vishay Siliconix.

From Si4486EY datasheet:

•

N-Channel MOSFET

•

VDS= 100V

•

ID = 23A continuous drain current at 125°C

•

VGS(MAX) =

± 20V

•

RθJA= 50°C/W

•

RDS(on)=20mΩ typical at VGS=10V, TJ=25°C

Reverse current threshold is:

Rds

reverse

Vth

reverse

300

)

(

−

Power dissipation:

Rds(on) is 25mΩ maximum at 25°C & 10Vgs and will

increase as the temperature increases. Add 40°C to

maximum ambient temperature to compensate for the

temperature rise due to power dissipation. At 100°C

(60°C + 40°C) Rds(on) will increase by 63%.

∗

Rds

)

(

maximum at 100°C

Maximum Junction temperature

⎟

⎠

⎞

⎜

⎝

⎛

∗

111

)

(

max

Recalculate based on calculated Junction

temperature, 115°C.

At 115°C Rds(on) will increase by 72%.

∗

Rds

)

(

maximum at 115°C

⎟

⎠

⎞

⎜

⎝

⎛

∗

113

)

(

max

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PI2001

Rev 1.0

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