Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc

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Page 7 of 15 May 2009

AP561

0.7-2.9 GHz WiMAX 8W Power Amplifier

2010-2025 MHz Reference Design

Typical TD-SCDMA Performance at 25

°C

Frequency (MHz)

2010 2015

2025

Units

Channel Power

+27

+27

+27

dBm

Power Gain

13

13

13

dB

Input Return Loss

8.4

8.6

8.7

dB

Output Return Loss

6.7

6.6

6.4

dB

ACLR

-49

-49

-49

dBc

Operating Current, Icc 673

675

679

mA

Collector Efficiency 6.2

6.2

6.1

%

Output P1dB

37.4 37.3

37.1

dBm

Quiescent Current, Icq

600

mA

Vpd

+5

V

Vcc

+12

V

Notes:

1.

The primary RF microstrip line is 50

Ω.

2.

Do not exceed 5.5V on Vpd or damage to D1 will occur.

3.

Do not exceed 13V on Vcc or damage to D2 will occur.

4.

Components shown on the silkscreen but not on the schematic are not used.

5.

6.

The edge of L1 next to the edge of C31.

7.

8.

The edge of C33 is placed next to the edge of C34.

9.

0

Ω jumpers can be replaced with copper trace in target application.

2010-2025 MHz Application Circuit Performance Plots

TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW

Gain vs Frequency

T=25°C

0

5

10

15

20

2.00

2.01

2.02

2.03

2.04

Frequency (GHz)

S21

Return Loss

T=25°C

-25

-20

-15

-10

-5

0

2.00

2.01

2.02

2.03

2.04

Frequency (GHz)

S11

S22

Efficiency vs Output Average Power vs. Frequency

T=25°C

0

3

6

9

12

15

20

21

22

23

24

25

26

27

28

29

30

Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz

Current vs Output Average Power vs. Frequency

T=25°C

600

625

650

675

700

20

21

22

23

24

25

26

27

28

Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz

ACLR vs. Output Average Power vs. Frequency

T=25°C

-60

-58

-56

-54

-52

-50

-48

-46

-44

-42

-40

20

21

22

23

24

25

26

27

28

Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz