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APT80GA60B датащи(PDF) 2 Page - Microsemi Corporation

номер детали APT80GA60B
подробное описание детали  High Speed PT IGBT
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT80GA60B датащи(HTML) 2 Page - Microsemi Corporation

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Dynamic Characteristics
TJ = 25°C unless otherwise specified
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT80GA60B_S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
6390
pF
C
oes
Output Capacitance
580
C
res
Reverse Transfer Capacitance
63
Q
g
3
Total Gate Charge
Gate Charge
V
GE = 15V
V
CE= 300V
I
C = 47A
230
Q
ge
Gate-Emitter Charge
40
nC
Q
gc
Gate- Collector Charge
78
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 4.7Ω
4
, V
GE = 15V,
L= 100uH, V
CE = 600V
240
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 47A
R
G = 4.7Ω
4
T
J = +25°C
23
ns
t
r
Current Rise Time
27
t
d(off)
Turn-Off Delay Time
158
t
f
Current Fall Time
78
E
on2
Turn-On Switching Energy
840
μJ
E
off
6
Turn-Off Switching Energy
751
t
d(on
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 47A
R
G = 4.7Ω
4
T
J = +125°C
21
ns
t
r
Current Rise Time
31
t
d(off)
Turn-Off Delay Time
194
t
f
Current Fall Time
132
E
on2
Turn-On Switching Energy
1275
μJ
E
off
6
Turn-Off Switching Energy
1112



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