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APT60GA60JD60 датащи(PDF) 4 Page - Microsemi Corporation

номер детали APT60GA60JD60
подробное описание детали  High Speed PT IGBT
PDF  9 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT60GA60JD60 датащи(HTML) 4 Page - Microsemi Corporation

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V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.7Ω
L = 100μH
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 4.7Ω
L = 100μH
V
GE = 15V
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
R
G = 4.7Ω, L = 100
μ
H, V
CE = 400V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 4.7Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,52A
E
off,26A
E
on2,26A
E
off,13A
E
on2,13A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,52A
E
off,26A
E
on2,52A
E
off,26A
E
on2,13A
E
off,13A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
E
on2,52A
Typical Performance Curves
APT60GA60JD60



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