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APT50GP60LDL датащи(PDF) 3 Page - Microsemi Corporation

номер детали APT50GP60LDL
подробное описание детали  Resonant Mode Combi IGBT
PDF  9 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT50GP60LDL датащи(HTML) 3 Page - Microsemi Corporation

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APT50GP60LDL(G)
TYPICAL PERFORMANCE CURVES
250µs PULSE
TEST<0.5 % DUTY
CYCLE
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
33.5
3
2.5
2
1.5
1
0.5
0
200
180
160
140
120
100
80
60
40
20
0
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80 100 120 140 160 180
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125 150
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 50A
T
J
= 25°C
I
C
= 100A
I
C
= 50A
I
C
= 25A
I
C
= 100A
I
C
= 50A
I
C
= 25A
Lead Temperature
Limited



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