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APT44F80L датащи(PDF) 4 Page - Microsemi Corporation |
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APT44F80L датащи(HTML) 4 Page - Microsemi Corporation |
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4 / 4 page ![]() 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Drain Source Gate Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) e3 100% Sn Plated TO-264(L)PackageOutline T-MAX®(B2)PackageOutline 1ms 100ms Rds(on) 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 Scaling for Different Case & Junction Temperatures: ID = ID(T C = 25°C) *(T J - TC)/125 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 t2 t1 Note: t1 = Pulse Duration DC line 100µs I DM 10ms 13µs 100µs I DM 100ms 10ms 13µs Rds(on) DC line TJ = 150°C TC = 25°C 1ms TJ = 125°C TC = 75°C VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea Figure10,MaximumForwardSafeOperatingArea RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration 1 10 100 800 1 10 100 800 200 100 10 1 0.1 200 100 10 1 0.1 APT44F80B2_L Microsemi’sproductsarecoveredbyoneormoreofU.S.patents4,895,8105,045,9035,089,4345,182,2345,019,5225,262,3366,503,7865,256,583 4,748,1035,283,2025,231,4745,434,0955,528,0586,939,743andforeignpatents.usandForeignpatentspending.AllRightsReserved. |
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