N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

V

oz

g

in·lbf

N·m

Ratings

23

15

140

±30

2165

18

Min

Typ

Max

545

0.23

0.11

-55

150

2500

1.03

29.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Gate-Source Voltage

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Package Weight

Terminals and Mounting Screws.

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

T

J

,T

STG

V

Isolation

W

T

Torque

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low trr for high reliability

• Ultra low Crss for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

SO

T-2

27

file # E145592

"UL Recognized"

G

S

S

D

APT22F100J

1000V, 23A, 0.38

Ω Max, trr ≤300ns

APT22F100J

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Microsemi Website - http://www.microsemi.com